基于NOR闪存技术的超低能量内模拟外数字矢量矩阵乘法器

M. Mahmoodi, D. Strukov
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引用次数: 38

摘要

向量矩阵乘法(VMM)是许多信号和数据处理算法中的核心运算。先前的研究表明,与数字乘法器相比,基于非易失性存储器的模拟乘法器在中低计算精度方面具有优越的能源效率。本文提出了一种具有数字输入/输出接口和可配置精度的极节能模拟模VMM电路。与以前的一些工作类似,计算是通过利用嵌入式浮门(FG)存储器的门耦合电路完成的。该方法的主要新颖之处在于超低功耗传感电路,该电路是基于横向吉尔伯特单元与浮动电阻和低增益放大器的拓扑组合而设计的。此外,数模输入转换与VMM合并,而电流模式算法模数电路在电路后端使用。这种转换和传感的实现允许电路完全在电流域中运行,从而实现高性能和能效。例如,采用嵌入式NOR闪存设计的55 nm工艺的400 × 400 5位VMM电路的布局后仿真结果显示,高达400 MHz的工作,1.68 POps/J的能量效率和39.45 TOps/mm2的计算吞吐量。此外,该电路对过程电压-温度变化具有鲁棒性,部分原因是包含了用于偏移补偿的额外FG单元
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Ultra-Low Energy Internally Analog, Externally Digital Vector-Matrix Multiplier Based on NOR Flash Memory Technology
Vector-matrix multiplication (VMM) is a core operation in many signal and data processing algorithms. Previous work showed that analog multipliers based on nonvolatile memories have superior energy efficiency as compared to digital counterparts at low-to-medium computing precision. In this paper, we propose extremely energy efficient analog mode VMM circuit with digital input/output interface and configurable precision. Similar to some previous work, the computation is performed by gate-coupled circuit utilizing embedded floating gate (FG) memories. The main novelty of our approach is an ultra-low power sensing circuitry, which is designed based on translinear Gilbert cell in topological combination with a floating resistor and a low-gain amplifier. Additionally, the digital-to-analog input conversion is merged with VMM, while current-mode algorithmic analog-to-digital circuit is employed at the circuit backend. Such implementations of conversion and sensing allow for circuit operation entirely in a current domain, resulting in high performance and energy efficiency. For example, post-layout simulation results for 400 × 400 5-bit VMM circuit designed in 55 nm process with embedded NOR flash memory, show up to 400 MHz operation, 1.68 POps/J energy efficiency, and 39.45 TOps/mm2 computing throughput. Moreover, the circuit is robust against process-voltage-temperature variations, in part due to inclusion of additional FG cells that are utilized for offset compensation.1
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