用于340 GHz波段探测的单Si金属氧化物半导体场效应晶体管平面天线

2011 International Conference on Infrared, Millimeter, and Terahertz Waves Pub Date : 2011-12-15 DOI:10.1109/IRMMW-THZ.2011.6105054

J. Lusakowski, M. Białek, D. Yavorskiy, J. Marczewski, P. Kopyt, W. Gwarek, W. Knap, K. Kucharski, M. Grodner, M. Górska, P. Grabiec

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引用次数: 6

摘要

对一组平面天线进行了数值设计，优化了用硅mosfet对340 GHz频率的检测。制作了一系列mosfet单片耦合不同类型的缝隙天线，并作为室温探测器进行了测试。在薄至40 μm的SOI衬底上制备了不同尺寸的mosfet。我们观察到一个光伏非谐振检测信号，它对入射光束的调制频率有很强的依赖性。我们发现信号不依赖于mosfet的几何参数。

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Planar antennas for detection of 340 GHz band with single Si metal-oxide-semiconductor field-effect transistors

A set of planar antennas was numerically designed to optimize detection of 340 GHz with Si MOSFETs. A series of MOSFETs monolithically coupled with different types of slot antennas was fabricated and tested as room temperature detectors. The MOSFETs of different sizes were fabricated on a SOI substrate thinned down to 40 μm. We observed a photovoltaic non-resonant detection signal and its strong dependence on the modulation frequency of the incident beam. We found that the signal does not strongly depend on geometrical parameters of MOSFETs.

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来源期刊

2011 International Conference on Infrared, Millimeter, and Terahertz Waves

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