利用基于密度的指数对比的纯硅芯波导的制造和演示

D. John, J. Bauters, Joseph Nedy, Wenzao Li, R. Moreira, J. Barton, J. Bowers, D. Blumenthal
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引用次数: 2

摘要

我们报告了一种用于芯片级波导的无掺杂纯硅芯波导(PSCW)的新方法,其目标是在芯片上达到类似光纤的损耗。化学计量二氧化硅薄膜被用作埋地通道波导的包层和核心材料,其所需的指数对比度由物理密度的差异产生。用x射线反射仪测量了薄膜的体积密度,并利用洛伦兹-洛伦兹(Clausius-Mosotti)关系将密度值与折射率的预期变化进行了比较。我们发现密度差为5.29%,对应折射率差为1.17%,测量到的传播损耗为2.119 ~ 2.660 dB/cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication and demonstration of a pure silica-core waveguide utilizing a density-based index contrast
We report a novel approach for creating a dopant-free pure silica-core waveguide (PSCW) for chip-scale waveguides with the goal of reaching fiber-like losses on-chip. Stoichiometric silica films were used as both the cladding and core material for buried channel waveguides, with the required index contrast generated by a difference in physical density. The bulk densities of the thin-films were measured with X-Ray Reflectometry, and these density values were compared with the expected change in refractive index using the Lorentz-Lorenz (Clausius-Mosotti) relation. We found the difference in density of 5.29% to correspond with the difference in refractive index of 1.17%, and measured propagation losses of 2.119 to 2.660 dB/cm.
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