{"title":"有机薄膜晶体管多层修饰的有效性能改进","authors":"Hang Yu, Jianlin Zhou, Yuanyuan Hao, Yao Ni","doi":"10.1051/epjap/2020200138","DOIUrl":null,"url":null,"abstract":"Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16 CuPc) was inserted in C8BTBT/SiO2 interface to form F16 CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16 CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2 /Vs has been fabricated.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":"27 1","pages":"30201"},"PeriodicalIF":0.9000,"publicationDate":"2020-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effective performance improvement of organic thin film transistors with multi-layer modifications\",\"authors\":\"Hang Yu, Jianlin Zhou, Yuanyuan Hao, Yao Ni\",\"doi\":\"10.1051/epjap/2020200138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16 CuPc) was inserted in C8BTBT/SiO2 interface to form F16 CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16 CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2 /Vs has been fabricated.\",\"PeriodicalId\":12228,\"journal\":{\"name\":\"European Physical Journal-applied Physics\",\"volume\":\"27 1\",\"pages\":\"30201\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2020-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Physical Journal-applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1051/epjap/2020200138\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Physical Journal-applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1051/epjap/2020200138","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Effective performance improvement of organic thin film transistors with multi-layer modifications
Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16 CuPc) was inserted in C8BTBT/SiO2 interface to form F16 CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16 CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2 /Vs has been fabricated.
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