气相晶体的生长。第二部分。存在惰性第三气体的解离升华晶体生长中的扩散限制和界面稳定性

M. M. Faktor, R. Heckingbottom, I. Garrett
{"title":"气相晶体的生长。第二部分。存在惰性第三气体的解离升华晶体生长中的扩散限制和界面稳定性","authors":"M. M. Faktor, R. Heckingbottom, I. Garrett","doi":"10.1039/J19710000001","DOIUrl":null,"url":null,"abstract":"The quantitative treatment of interfacial stability in crystal growth from the vapour phase, presented in a previous paper, has been extended to cover (1) large temperature differences between source and seed, (2) arbitrary temperature profiles, and (3) an inert third species in the gas phase. The effect on the growth rate and critical growth rate of altering the temperature profile has been investigated and found to be small if the slope at the growing interface is above about 10 K cm–1. The influence of small quantities of inert gas on the temperature difference corresponding to the critical growth rate is shown to provide a useful stabilising effect against unavoidable temperature fluctuations. At the same time, the partial pressure ratio α of the active components becomes a less sensitive function of the distance along the growth capsule. The treatment is general; however, the familiar case of cadmium sulphide is included as an illustration and for comparison with our previous results.","PeriodicalId":17321,"journal":{"name":"Journal of The Chemical Society A: Inorganic, Physical, Theoretical","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1971-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Growth of crystals from the gas phase. Part II. Diffusional limitations and interfacial stability in crystal growth by dissociative sublimation, with an inert third gas present\",\"authors\":\"M. M. Faktor, R. Heckingbottom, I. Garrett\",\"doi\":\"10.1039/J19710000001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quantitative treatment of interfacial stability in crystal growth from the vapour phase, presented in a previous paper, has been extended to cover (1) large temperature differences between source and seed, (2) arbitrary temperature profiles, and (3) an inert third species in the gas phase. The effect on the growth rate and critical growth rate of altering the temperature profile has been investigated and found to be small if the slope at the growing interface is above about 10 K cm–1. The influence of small quantities of inert gas on the temperature difference corresponding to the critical growth rate is shown to provide a useful stabilising effect against unavoidable temperature fluctuations. At the same time, the partial pressure ratio α of the active components becomes a less sensitive function of the distance along the growth capsule. The treatment is general; however, the familiar case of cadmium sulphide is included as an illustration and for comparison with our previous results.\",\"PeriodicalId\":17321,\"journal\":{\"name\":\"Journal of The Chemical Society A: Inorganic, Physical, Theoretical\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1971-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of The Chemical Society A: Inorganic, Physical, Theoretical\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1039/J19710000001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Chemical Society A: Inorganic, Physical, Theoretical","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1039/J19710000001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

摘要

在之前的一篇论文中提出的从气相开始晶体生长的界面稳定性的定量处理,已经扩展到涵盖(1)源和种子之间的大温差,(2)任意温度分布,以及(3)气相中的惰性第三种。研究了温度分布对生长速率和临界生长速率的影响,发现当生长界面的斜率大于10 K cm-1时,温度分布对生长速率和临界生长速率的影响很小。少量惰性气体对与临界生长速率相对应的温差的影响,对不可避免的温度波动提供了有用的稳定作用。同时,活性组分的分压比α随生长囊距离的变化变得不那么敏感。治疗是一般的;然而,我们所熟悉的硫化镉的情况是作为一个例证,并与我们以前的结果进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of crystals from the gas phase. Part II. Diffusional limitations and interfacial stability in crystal growth by dissociative sublimation, with an inert third gas present
The quantitative treatment of interfacial stability in crystal growth from the vapour phase, presented in a previous paper, has been extended to cover (1) large temperature differences between source and seed, (2) arbitrary temperature profiles, and (3) an inert third species in the gas phase. The effect on the growth rate and critical growth rate of altering the temperature profile has been investigated and found to be small if the slope at the growing interface is above about 10 K cm–1. The influence of small quantities of inert gas on the temperature difference corresponding to the critical growth rate is shown to provide a useful stabilising effect against unavoidable temperature fluctuations. At the same time, the partial pressure ratio α of the active components becomes a less sensitive function of the distance along the growth capsule. The treatment is general; however, the familiar case of cadmium sulphide is included as an illustration and for comparison with our previous results.
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