H/sub - 2-/和PH/sub - 3-/等离子体处理InP的肖特基结特性

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147453

T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji

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引用次数: 0

摘要

讨论了H/sub 2/和PH/sub 3/等离子体处理对InP表面肖特基势垒结特性的影响。通过H/sub /和PH/sub /等离子体表面处理，获得了势垒高度高达0.7 eV的Au/n-InP肖特基结。结果表明，这种势垒高度的增强部分是由于表面费米能级钉钉的减弱，部分是由于形成了薄氧化膜或薄P层。在H/sub - 2/等离子体处理过程中，在InP表面和表面附近产生了低于传导带0.21和0.51 eV的深能级。在PH/亚3/等离子体处理的情况下没有观察到这些陷阱。

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Characteristics of Schottky junctions on H/sub 2-/ and PH/sub 3-/plasma treated InP

Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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