采用分段线性电流曲率补偿的sub-1V 3.9µW带隙基准，在−50°C至+150°C范围内的3σ误差为±0.34%

2012 Symposium on VLSI Circuits (VLSIC) Pub Date : 2012-06-13 DOI:10.1109/VLSIC.2012.6243770

S. Sano, Yasuhiko Takahashi, M. Horiguchi, M. Ota

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引用次数: 18

摘要

采用低功率电流模式BGR磁芯和分段线性曲率补偿系统，在-50°C ~ +150°C的宽温度范围和+0.9 V ~ +5.5V的宽电压范围内，获得了电压变化小(±0.34%)、温度漂移低(1mV)的亚1v 3.9μW带隙基准(BGR)。BGR占地0.1mm2，采用0.13μm CMOS技术，三孔结构。

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A sub-1V 3.9µW bandgap reference with a 3σ inaccuracy of ±0.34% from −50°C to +150°C using piecewise-linear-current curvature compensation

A sub-1V 3.9μW bandgap reference (BGR) with small voltage variation of ±0.34% and low temperature drift (1mV) over a wide temperature range (-50°C ~ +150°C) and a wide voltage range (+0.9 V ~ +5.5V) by using a low power current mode BGR core and a piecewise-linear curvature compensation system. The BGR occupies 0.1mm² in 0.13μm CMOS technology with triple well structure.

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2012 Symposium on VLSI Circuits (VLSIC)

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