HT-EBL和ET-HBL高效p-n - Si太阳能电池的数值模拟

2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE) Pub Date : 2016-12-01 DOI:10.1109/ICECTE.2016.7879563

A. Amin, M. F. Hossain

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引用次数: 0

摘要

在硅片的前表面和后表面分别添加空穴传输-电子阻挡层(HT-EBL)和电子传输-空穴阻挡层(ET-HBL)来设计高效率的p-n均结硅太阳电池。通过改变p型和n型硅层的掺杂密度和层厚，利用微电子和光子结构分析一维器件模拟程序(AMPS-1D)对电池进行了模拟。研究了掺杂密度和层厚对太阳能电池效率的影响，得到了最佳的效率。当掺杂密度为1.0e+021 cm−3，层厚为8000 nm时，效率达到28.198%。

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Numerical simulation for the high efficiency p-n Si solar cell with HT-EBL and ET-HBL

The Hole Transport-Electron Blocking Layer (HT-EBL) and Electron Transport-Hole Blocking Layer (ET-HBL) are added on the front surface and back surface of the silicon wafer respectively for designing the high efficiency p-n homojunction Si solar cell in this simulation. The cell was simulated using A One-Dimensional Device Simulation Program for Analysis of Microelectronic and Photonic Structures (AMPS-1D) by varying the doping density and layer thickness of the p type and n type Si layer. It has been investigated that there have a great effect of doping density and layer thickness on the efficiency of solar cell and optimum efficiency has been achieved. The maximum efficiency of 28.198% has been investigated at the doping density of 1.0e+021 cm−3 and layer thickness of 8000 nm.

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2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)

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