用OMVPE在硅上生长高纯度InP和制备高灵敏度InP/GaInAs异质结光电晶体管

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147307

L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo

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引用次数: 0

摘要

介绍了利用有机金属气相外延(OMVPE)技术在Si上生长高纯度InP和制备高速高灵敏度InP/GaInAs异质结光电晶体管的方法。结果表明，通过优化InP和Si之间的GaAs中间层的厚度，可以在Si上生长出高质量的InP。在硅上生长的小面积InP/GaInAs异质结光电晶体管可以实现高速和高灵敏度的结合。高纯度InP-on-Si在300 K和77 K下的电子迁移率分别高达4000 cm/sup 2/ V-s和25000 cm/sup 2/ V-s。残留浓度低至6*10/sup 14/ cm/sup -3/ sup。通过制作出光学增益为125 A/W、暗电流低至300 pA、带宽为4.4 GHz的InP/GaInAs异质结光电晶体管(hpt)，证实了该材料的质量

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Growth of high purity InP and fabrication of high sensitivity InP/GaInAs heterojunction phototransistors on silicon by OMVPE

The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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