Jun Hu, Zhaozhao Xu, Wenting Duan, Ziquan Fang, Donghua Liu, W. Qian
{"title":"MOSFET IDVG曲线双驼峰效应研究","authors":"Jun Hu, Zhaozhao Xu, Wenting Duan, Ziquan Fang, Donghua Liu, W. Qian","doi":"10.1109/CSTIC49141.2020.9282418","DOIUrl":null,"url":null,"abstract":"In the traditional CMOS manufacturing process, we often use the IV curve to evaluate the characteristics of the transistor, and sometimes the IdVg curves of the transistor will appear double hump, especially for the NMOS. This paper analyzes mechanism of the double hump phenomenon of the IdVg curve. There are two main causes, one is due to the segregation effect of impurities, and the other is due to the manufacturing process of STI. This article also shares ways to improve this phenomenon.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"35 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of MOSFET IDVG Curve Double Hump Effect\",\"authors\":\"Jun Hu, Zhaozhao Xu, Wenting Duan, Ziquan Fang, Donghua Liu, W. Qian\",\"doi\":\"10.1109/CSTIC49141.2020.9282418\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the traditional CMOS manufacturing process, we often use the IV curve to evaluate the characteristics of the transistor, and sometimes the IdVg curves of the transistor will appear double hump, especially for the NMOS. This paper analyzes mechanism of the double hump phenomenon of the IdVg curve. There are two main causes, one is due to the segregation effect of impurities, and the other is due to the manufacturing process of STI. This article also shares ways to improve this phenomenon.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"35 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282418\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the traditional CMOS manufacturing process, we often use the IV curve to evaluate the characteristics of the transistor, and sometimes the IdVg curves of the transistor will appear double hump, especially for the NMOS. This paper analyzes mechanism of the double hump phenomenon of the IdVg curve. There are two main causes, one is due to the segregation effect of impurities, and the other is due to the manufacturing process of STI. This article also shares ways to improve this phenomenon.
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