J.P Sydow , D Chamberlain , R.A Buhrman , K Char , B.H Moeckly
{"title":"SNS斜坡边Josephson结的电迁移研究","authors":"J.P Sydow , D Chamberlain , R.A Buhrman , K Char , B.H Moeckly","doi":"10.1016/S0964-1807(99)00005-8","DOIUrl":null,"url":null,"abstract":"<div><p>We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa<sub>2</sub>Cu<sub>2.79</sub>Co<sub>0.21</sub>O<sub>7−<em>δ</em></sub>, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm<sup>2</sup>) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in <em>I</em><sub>c</sub><em>R</em><sub>n</sub> from <5<!--> <em>μ</em>V, to as much as 205<!--> <em>μ</em>V. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 10","pages":"Pages 511-517"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(99)00005-8","citationCount":"5","resultStr":"{\"title\":\"Electromigration study of SNS ramp edge Josephson junctions\",\"authors\":\"J.P Sydow , D Chamberlain , R.A Buhrman , K Char , B.H Moeckly\",\"doi\":\"10.1016/S0964-1807(99)00005-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa<sub>2</sub>Cu<sub>2.79</sub>Co<sub>0.21</sub>O<sub>7−<em>δ</em></sub>, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm<sup>2</sup>) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in <em>I</em><sub>c</sub><em>R</em><sub>n</sub> from <5<!--> <em>μ</em>V, to as much as 205<!--> <em>μ</em>V. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed.</p></div>\",\"PeriodicalId\":100110,\"journal\":{\"name\":\"Applied Superconductivity\",\"volume\":\"6 10\",\"pages\":\"Pages 511-517\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0964-1807(99)00005-8\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Superconductivity\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0964180799000058\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0964180799000058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
我们报道了氮层为YBa2Cu2.79Co0.21O7−δ(掺杂版的YBCO电极)的SNS斜坡边Josephson结的基面氧空位电迁移的影响。通过在室温下施加4-10 mA (~ 2-5 mA /cm2)的电流偏置，改善了氮层和硫层的基面氧阶和含量。这可以通过IcRn从5 μV增加到205 μV来证明。讨论了这些结果对SNS结制造的影响，以及这种器件中隧道的性质。
Electromigration study of SNS ramp edge Josephson junctions
We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa2Cu2.79Co0.21O7−δ, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm2) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in IcRn from <5 μV, to as much as 205 μV. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed.
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