栅极全锗nMOSFET的三维蒙特卡罗模拟

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1142/S0218126613400239

Shufang Zhu, K. Wei, G. Du, Xiaoyan Liu

{"title":"栅极全锗nMOSFET的三维蒙特卡罗模拟","authors":"Shufang Zhu, K. Wei, G. Du, Xiaoyan Liu","doi":"10.1142/S0218126613400239","DOIUrl":null,"url":null,"abstract":"Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET\",\"authors\":\"Shufang Zhu, K. Wei, G. Du, Xiaoyan Liu\",\"doi\":\"10.1142/S0218126613400239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/S0218126613400239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0218126613400239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

栅极-全方位mosfet是一种很有前途的新型器件结构，锗具有很高的载流子迁移率。本文采用有效电位法对GAA锗纳米线nMOSFET进行了三维并行蒙特卡罗仿真。将模拟结果与经典结果进行比较，可以看出量子效应对密度、速度和能量的分布都有影响，并使漏极电流减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET

Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

自引率

0.00%

发文量