p-n异质结构基于a-Si:H/c-Si的畸变辐射激发

Андрей Владимирович Андрианов, А. Н. Алешин, С.Н. Аболмасов, Е.И. Теруков, А.О. Захарьин
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引用次数: 0

摘要

本文研究了飞秒波长为800 nm的钛蓝宝石激光在a- si:H/ c-Si的p-n异质结构光激发下产生太赫兹(THz)辐射的结果。观察到的太赫兹辐射的性质可以用在飞秒带间光激发下在势垒区域产生的非平衡载流子的快速光电流来解释。快速光电流,反过来,发射太赫兹电磁波。观测到的太赫兹辐射的波形和振幅谱反映了结构中光激发载流子的动力学。在强度方面,基于a-Si:H//c-Si的p-n异质结构观测到的太赫兹辐射与n-InAs晶体产生的太赫兹辐射相当,n-InAs晶体被广泛用作太赫兹时域光谱系统的发射体。因此,a-Si:H//c-Si p-n异质结构可以作为太赫兹发射体来解决太赫兹光谱问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Возбуждение терагерцевого излучения в p-n-гетероструктурах на основе a-Si:H/c-Si
The results of studying the generation of terahertz (THz) radiation in p-n-heterostructures based on a-Si:H//c-Si upon their photoexcitation by radiation from a femtosecond titanium-sapphire laser with a wavelength of 800 nm are presented. The properties of the observed THz radiation can be explained by excitation of fast photocurrent of nonequilibrium charge carriers created in the region of the potential barrier under femtosecond interband photoexcitation of the structure. The fast photocurrent, in turn, emits a THz electromagnetic wave. The waveforms and amplitude spectra of the observed THz radiation reflect the dynamics of photoexcited charge carriers in structures. In terms of intensity, the THz radiation observed from the studied p–n heterostructures based on a-Si:H//c-Si is comparable to the THz radiation generated in n-InAs crystals, which are widely used as emitters in systems of THz time-domain spectroscopy. Therefore, a-Si:H//c-Si p-n-heterostructures can be used as THz emitters for solving tasks of THz spectroscopy.
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