Ni1-x-yCuxZnyFe2O4尖晶石铁素体的晶体结构细化和电学性能

Ashima, S. Dagar, D. Verma, H. Dhull, A. Yadav, S. Khasa
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引用次数: 2

摘要

采用固相反应法制备了Ni1-x-yCuxZnyFe2O4尖晶石铁素体。样品的XRD衍射图和Rietveld细化分析表明,尖晶石铁素体形成了具有Fd3m空间基的单晶相。利用XRD数据测定了制备的铁氧体样品的晶格常数(a)、x射线密度(ρx)和晶胞体积(V)。测定了导电率(σdc)随温度的变化规律。利用载流子的跳变机理解释了直流电导率的变化规律。直流电导率随温度的升高而升高。随着Zn和Ni浓度的增加,其含量也随之增加。根据σdc的Arrhenius曲线计算活化能。采用固相反应法制备了Ni1-x-yCuxZnyFe2O4尖晶石铁素体。样品的XRD衍射图和Rietveld细化分析表明,尖晶石铁素体形成了具有Fd3m空间基的单晶相。利用XRD数据测定了制备的铁氧体样品的晶格常数(a)、x射线密度(ρx)和晶胞体积(V)。测定了导电率(σdc)随温度的变化规律。利用载流子的跳变机理解释了直流电导率的变化规律。直流电导率随温度的升高而升高。随着Zn和Ni浓度的增加,其含量也随之增加。根据σdc的Arrhenius曲线计算活化能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crystal structure refinement and electrical properties of Ni1-x-yCuxZnyFe2O4 spinel ferrites
Ni1-x-yCuxZnyFe2O4 spinel ferrites have been prepared through solid-state reaction method. The XRD diffraction pattern and Rietveld refinement analysis of the samples revealed the formation of single crystalline phase of the spinel ferrite having Fd3m space group. The lattice constant (a), X-ray density (ρx), volume of unit cell (V) of the developed ferrite samples have been determined with the help XRD data. The electrical conductivity (σdc) was measured as a function of temperature. The behavior of the dc conductivity was explained on the basis of hopping mechanism of charge carriers. The value of dc conductivity was found to be increases as the temperature increases. It also increases with increase in the concentration of Zn and Ni. The value of activation energy was calculated from the Arrhenius curve of σdc.Ni1-x-yCuxZnyFe2O4 spinel ferrites have been prepared through solid-state reaction method. The XRD diffraction pattern and Rietveld refinement analysis of the samples revealed the formation of single crystalline phase of the spinel ferrite having Fd3m space group. The lattice constant (a), X-ray density (ρx), volume of unit cell (V) of the developed ferrite samples have been determined with the help XRD data. The electrical conductivity (σdc) was measured as a function of temperature. The behavior of the dc conductivity was explained on the basis of hopping mechanism of charge carriers. The value of dc conductivity was found to be increases as the temperature increases. It also increases with increase in the concentration of Zn and Ni. The value of activation energy was calculated from the Arrhenius curve of σdc.
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