La 0.825Sr 0.175 mno3 / srtio3薄膜层状自旋构型的非同步旋转

Xin Li, Jingzhi Han, Xiongzuo Zhang, R. Wu, Yinfeng Zhang, Haidong Tian, M. Xue, X. Wen, Zhichao Li, Shunquan Liu, Wenyun Yang, Changsheng Wang, H. Du, Xiaodong Zhang, Yingchang Yang, Jinbo Yang
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摘要

近年来,单层钙钛矿结构外延膜的磁性能呈层状分布。然而,各层自旋构型对温度和应变状态变化的不同响应,特别是在105 K左右SrTiO3 (STO)衬底结构相变引起的层状膜的细微响应尚未完全揭示。低掺杂La1-xSrxMnO3 (x=0.175) /SrTiO3薄膜在105 K左右仅在平面方向上观察到残余磁矩(REM)和矫顽力的急剧下降和异常增加,并通过微观结构、应变分布和化学不均匀性进一步推断出层状磁结构。通过三层模型讨论了在105 K附近磁性能的异常变化,认为应变诱导层状结构的中间层形成较软的铁磁层,中间层的自旋构型相对于薄膜其他部分发生了非同步转变,这可能是由于薄膜内部在105 K左右的面内应变发生了变化。我们的工作通过利用测量系统中的残余磁场揭示了单个磁层随温度升高的变化,并且中间层自旋组态的突变也可以为未来新型自旋电子学器件的设计提供服务。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Non-Synchronized Rotation of Layered Spin Configurations in La 0.825Sr 0.175MnO 3/SrTiO 3 Film
Magnetic properties of single perovskite-structure epitaxial film are reported to have layered distribution recently. However, the different responses of spin configurations in individual layers to the variation of temperature and strain state, especially the subtle response of layered film due to structural phase transformation of SrTiO3 (STO) substrate around 105 K, have not been revealed completely. Drastic drop and concomitant abnormal increase of remnant magnetic moments (REM) and coercivity of low-doped La1-xSrxMnO3 (x=0.175) /SrTiO3 film were observed for the first time around 105 K only in the in-plane direction, and layered magnetic structures were further inferred based on investigation of microstructure, strain distribution and chemical inhomogeneity. Abnormal change of magnetic properties around 105 K was discussed by a three-layer model, in which softer ferromagnetic layer was supposed to form in the middle layer of strain induced layered structure, and the spin configuration of middle layer underwent non-synchronous transformation relative to other parts of the film, which may be attributed to the change of in-plane strain inside the film around 105 K. Our work reveals the variation of individual magnetic layers with the increase of temperature through utilizing the remnant magnetic field in measuring system, and the abrupt reversal of spin configuration at the intermediate layer can also serve the design of novel spintronics devices in the future.
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