热载流子诱导的深亚微米mosfet在100/spl度/C下的降解

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI:10.1109/RELPHY.2000.843898

E. Li, Elyse Rosenbaum, Leonard F. Register, J. Tao, P. Fang

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引用次数: 12

摘要

这项工作表明，V/sub g/=V/sub d/是在100/spl度/C下工作的深亚微米nmosfet和pmosfet的最坏应力条件。即使电源电压大于2.5 V，在100/spl℃下的降解也比室温下严重。研究了沟道长度对衬底电流温度依赖性的影响。

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Hot carrier induced degradation in deep submicron MOSFETs at 100/spl deg/C

This work demonstrates that V/sub g/=V/sub d/ is the worst case stress condition for deep submicron NMOSFETs and PMOSFETs operating at 100/spl deg/C. Degradation is more severe at 100/spl deg/C than at room temperature even for supply voltages greater than 2.5 V. The effect of channel length on the substrate current's temperature-dependence is also examined.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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