L. Megalini, Brian C. Cabinian, Hongwei Zhao, D. Oakley, J. Bowers, J. Klamkin
{"title":"在图案衬底上直接异质外延生长的全单片1550nm硅激光器","authors":"L. Megalini, Brian C. Cabinian, Hongwei Zhao, D. Oakley, J. Bowers, J. Klamkin","doi":"10.1364/CLEO_AT.2017.AM4A.6","DOIUrl":null,"url":null,"abstract":"We demonstrate diode rectifying behavior of 1550-nm laser structures on exact-oriented (001) silicon substrates after coalescence of densely-packed, smooth, highly crystalline, and millimeter-long indium phosphide nanowires grown by MOCVD using aspect-ratio-trapping and selective area growth.","PeriodicalId":6652,"journal":{"name":"2017 Conference on Lasers and Electro-Optics (CLEO)","volume":"13 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates\",\"authors\":\"L. Megalini, Brian C. Cabinian, Hongwei Zhao, D. Oakley, J. Bowers, J. Klamkin\",\"doi\":\"10.1364/CLEO_AT.2017.AM4A.6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate diode rectifying behavior of 1550-nm laser structures on exact-oriented (001) silicon substrates after coalescence of densely-packed, smooth, highly crystalline, and millimeter-long indium phosphide nanowires grown by MOCVD using aspect-ratio-trapping and selective area growth.\",\"PeriodicalId\":6652,\"journal\":{\"name\":\"2017 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"13 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/CLEO_AT.2017.AM4A.6\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEO_AT.2017.AM4A.6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates
We demonstrate diode rectifying behavior of 1550-nm laser structures on exact-oriented (001) silicon substrates after coalescence of densely-packed, smooth, highly crystalline, and millimeter-long indium phosphide nanowires grown by MOCVD using aspect-ratio-trapping and selective area growth.
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