Yang Luo, Jesus A. M. Calzada, Gong Chen, P. Nguyen, V. Jelic, Yu-Jui Ray Liu, D. Mildenberger, Howe R. J. Simpson, F. Hegmann
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Characterization of THz-induced bias voltage modulation in an STM
To understand and characterize the transient bias voltage induced by single-cycle terahertz (THz) pulses coupled to a scanning tunneling microscope (STM), the Bardeen tunneling model is applied to a 3-dimensional geometry of the STM junction. The simulated THz-induced tunneling current at the junction agrees well with that observed by THz-STM on a Cu(111) surface, providing a benchmark to quantify the THz-induced bias voltage at the tip-sample interface.
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