宽禁带半导体中的光致空间电荷和电导率光栅

M.A. Bryushinin, P.M. Karavaev, I.A. Sokolov
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引用次数: 1

摘要

我们报道了宽禁带半导体中空间电荷和电导率光栅的光激发。该方法是基于由两个光波组成的振荡干涉图样的半导体材料的照明,其中一个光波以频率ω调制相位。在该技术中,通过短路半导体的非稳态光电流是可测量的量。交流电的产生是由于在光照下晶体体积中的光导率和空间电荷电场光栅的周期性相对位移。在β-Ga2O3晶体中进行了实验,确定了光致载流子的主要参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optically Induced Space-charge and Conductivity Gratings in Wide-bandgap Semiconductors

We report optical excitation of space-charge and conductivity gratings in wide-bandgap semiconductors. The approach is based on the illumination of semiconductor material with an oscillating interference pattern formed of two light waves, one of which is phase modulated with frequency ω. The non-steady-state photocurrent flowing through the short-circuited semiconductor is the measurable quantity in this technique. The alternating current results from the periodic relative shifts of the photoconductivity and space charge electric field gratings which arise in the volume of the crystal under illumination. The experiments are carried out in β-Ga2O3 crystal and the main parameters of the photoinduced carriers are determined.

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