硅集成单像素太赫兹相机

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2020-11-08 DOI:10.1109/IRMMW-THz46771.2020.9370707

R. Jain, P. Hillger, J. Grzyb, U. Pfeiffer

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引用次数: 0

摘要

我们提出了一种采用商用0.13 μm SiGe BiCMOS技术实现的全电子太赫兹单像素相机(SPC)。关键的使能元件是由8 × 8未锁定源像素组成的源阵列片上系统(SoC)。它们一起在0.42太赫兹辐射出最大10.8兆瓦的功率。SoC包括可编程逻辑，用于项目结构化，可重构的太赫兹光，可以在空间和调制频率上复用。它与一个单像素直接功率检测器配对，以演示一个SPC系统，该系统可以以每秒数千帧的速度捕获高动态范围太赫兹图像。

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Silicon-integrated Single Pixel Terahertz Camera

We present an all-electronic THz single pixel camera (SPC) implemented in a commercial 0.13 μm SiGe BiCMOS technology. The key enabling element is a source array system-on-a-chip (SoC) consisting of 8 × 8 unlocked source pixels. Together, they radiate maximum 10.8 mW of power at 0.42 THz. The SoC includes programmable logic to project structured, reconfigurable THz light that can be multiplexed in space and modulation frequency. It is paired with a single pixel direct power detector to demonstrate an SPC system that can potentially capture high dynamic range THz images at thousands of frames each second.

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2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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