无铅CsSnI3钙钛矿太阳能电池的设计与器件建模

Y. Kumar, Sweta Minj, N. Shukla, S. Tiwari
{"title":"无铅CsSnI3钙钛矿太阳能电池的设计与器件建模","authors":"Y. Kumar, Sweta Minj, N. Shukla, S. Tiwari","doi":"10.52228/jrub.2022-35-1-4","DOIUrl":null,"url":null,"abstract":"\n Research of lead-free Perovskite based solar cells has gained speedy and growing attention with urgent intent to eliminate toxic lead in Perovskite materials. The main purpose of this work is to supplement the research progress with comparative analysis of different lead-free Perovskite based solar cells by numerical simulation method using solar cell capacitance simulator (SCAPS-1D) software. The environmental friendliness and excellent thermal stability proves Cesium Tin Iodide (CsSnI3) as one of the promising materials for the commercialization of the Perovskite solar cells. However, CsSnI3 solar cells suffer from poor efficiency due to having low open-circuit voltage, VOC attributed to poor absorber film quality as well as energy level mismatch at the interfaces between different layers like transparent front contact. The architecture of the solar cell is n-i-p device structure acts as light CsSnI3 absorber active layer, TiO2 as electron transport layer and Spiro-OMeTAD as hole transport layer with device structure FTO/ TiO2/CsSnI3 / Spiro-OMeTAD /Au. The open circuit voltage Voc, short circuit current density Isc, fill factor and power conversion efficiency Voc=1.09V, Jsc=28.85mA/cm2, FF=88.65%, eta=28.09%, V_MPP=0.99V, J_MPP=28.15 mA/cm2 respectively. \n","PeriodicalId":17214,"journal":{"name":"Journal of Ravishankar University (PART-B)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and Device Modeling of Lead Free CsSnI3 Perovskite Solar Cell\",\"authors\":\"Y. Kumar, Sweta Minj, N. Shukla, S. Tiwari\",\"doi\":\"10.52228/jrub.2022-35-1-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Research of lead-free Perovskite based solar cells has gained speedy and growing attention with urgent intent to eliminate toxic lead in Perovskite materials. The main purpose of this work is to supplement the research progress with comparative analysis of different lead-free Perovskite based solar cells by numerical simulation method using solar cell capacitance simulator (SCAPS-1D) software. The environmental friendliness and excellent thermal stability proves Cesium Tin Iodide (CsSnI3) as one of the promising materials for the commercialization of the Perovskite solar cells. However, CsSnI3 solar cells suffer from poor efficiency due to having low open-circuit voltage, VOC attributed to poor absorber film quality as well as energy level mismatch at the interfaces between different layers like transparent front contact. The architecture of the solar cell is n-i-p device structure acts as light CsSnI3 absorber active layer, TiO2 as electron transport layer and Spiro-OMeTAD as hole transport layer with device structure FTO/ TiO2/CsSnI3 / Spiro-OMeTAD /Au. The open circuit voltage Voc, short circuit current density Isc, fill factor and power conversion efficiency Voc=1.09V, Jsc=28.85mA/cm2, FF=88.65%, eta=28.09%, V_MPP=0.99V, J_MPP=28.15 mA/cm2 respectively. \\n\",\"PeriodicalId\":17214,\"journal\":{\"name\":\"Journal of Ravishankar University (PART-B)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ravishankar University (PART-B)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.52228/jrub.2022-35-1-4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ravishankar University (PART-B)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.52228/jrub.2022-35-1-4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

无铅钙钛矿太阳能电池的研究得到了越来越多的关注,迫切需要消除钙钛矿材料中的有毒铅。本工作的主要目的是利用太阳能电池电容模拟器(SCAPS-1D)软件,通过数值模拟的方法对不同的无铅钙钛矿基太阳能电池进行对比分析,以补充研究进展。环境友好性和优异的热稳定性证明了铯锡碘化(CsSnI3)是钙钛矿太阳能电池商业化的有前途的材料之一。然而,由于开路电压低,CsSnI3太阳能电池的效率较低,吸收膜质量差导致VOC,以及透明前触点等不同层之间的界面处的能级不匹配。该太阳能电池的结构为n-i-p结构,器件结构为轻CsSnI3吸收层,TiO2为电子传输层,Spiro-OMeTAD为空穴传输层,器件结构为FTO/ TiO2/CsSnI3 / Spiro-OMeTAD /Au。开路电压Voc、短路电流密度Isc、填充系数和功率转换效率Voc=1.09V、Jsc=28.85mA/cm2、FF=88.65%、eta=28.09%、V_MPP=0.99V、J_MPP=28.15 mA/cm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Device Modeling of Lead Free CsSnI3 Perovskite Solar Cell
Research of lead-free Perovskite based solar cells has gained speedy and growing attention with urgent intent to eliminate toxic lead in Perovskite materials. The main purpose of this work is to supplement the research progress with comparative analysis of different lead-free Perovskite based solar cells by numerical simulation method using solar cell capacitance simulator (SCAPS-1D) software. The environmental friendliness and excellent thermal stability proves Cesium Tin Iodide (CsSnI3) as one of the promising materials for the commercialization of the Perovskite solar cells. However, CsSnI3 solar cells suffer from poor efficiency due to having low open-circuit voltage, VOC attributed to poor absorber film quality as well as energy level mismatch at the interfaces between different layers like transparent front contact. The architecture of the solar cell is n-i-p device structure acts as light CsSnI3 absorber active layer, TiO2 as electron transport layer and Spiro-OMeTAD as hole transport layer with device structure FTO/ TiO2/CsSnI3 / Spiro-OMeTAD /Au. The open circuit voltage Voc, short circuit current density Isc, fill factor and power conversion efficiency Voc=1.09V, Jsc=28.85mA/cm2, FF=88.65%, eta=28.09%, V_MPP=0.99V, J_MPP=28.15 mA/cm2 respectively.
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