{"title":"基于GaAs MMIC技术的超反射损耗内联插入式微波MEMS功率传感器","authors":"Zhiqiang Zhang, X. Liao","doi":"10.1109/ICSENS.2014.6985290","DOIUrl":null,"url":null,"abstract":"This paper proposes an inline insertion microwave microelectromechanical systems (MEMS) power sensor based on measuring the power dissipated by intrinsic ohmic losses of a coplanar waveguide (CPW) signal line by thermopiles. In order to achieve ultra reflection losses, cold junctions of the thermopiles are covered with the CPW ground lines for depressing electromagnetic coupling effects and serving as hot sink. To increase the sensitivity, the CPW ground lines are suspended above hot junctions of the thermopiles for reducing thermal losses and the CPW dimension near the thermopiles is designed to increase the temperature of the hot junctions. This sensor is completely compatible with the GaAs monolithic microwave integrated circuits (MMIC) technology. Experiments show that this optimized power sensor has resulted in reflection losses of less than -24.3 dB up to 26 GHz, with insertion losses of less than 0.37 dB. For the input power of 0.5-300 mW, the good linearity of the output response is obtained and average sensitivities are more than 6.26 and 8.21 mV/W at 2 and 20 GHz, respectively.","PeriodicalId":13244,"journal":{"name":"IEEE SENSORS 2014 Proceedings","volume":"32 1","pages":"1463-1466"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An inline insertion microwave MEMS power sensor based on GaAs MMIC technology with ultra reflection losses\",\"authors\":\"Zhiqiang Zhang, X. Liao\",\"doi\":\"10.1109/ICSENS.2014.6985290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes an inline insertion microwave microelectromechanical systems (MEMS) power sensor based on measuring the power dissipated by intrinsic ohmic losses of a coplanar waveguide (CPW) signal line by thermopiles. In order to achieve ultra reflection losses, cold junctions of the thermopiles are covered with the CPW ground lines for depressing electromagnetic coupling effects and serving as hot sink. To increase the sensitivity, the CPW ground lines are suspended above hot junctions of the thermopiles for reducing thermal losses and the CPW dimension near the thermopiles is designed to increase the temperature of the hot junctions. This sensor is completely compatible with the GaAs monolithic microwave integrated circuits (MMIC) technology. Experiments show that this optimized power sensor has resulted in reflection losses of less than -24.3 dB up to 26 GHz, with insertion losses of less than 0.37 dB. For the input power of 0.5-300 mW, the good linearity of the output response is obtained and average sensitivities are more than 6.26 and 8.21 mV/W at 2 and 20 GHz, respectively.\",\"PeriodicalId\":13244,\"journal\":{\"name\":\"IEEE SENSORS 2014 Proceedings\",\"volume\":\"32 1\",\"pages\":\"1463-1466\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE SENSORS 2014 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENS.2014.6985290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE SENSORS 2014 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2014.6985290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An inline insertion microwave MEMS power sensor based on GaAs MMIC technology with ultra reflection losses
This paper proposes an inline insertion microwave microelectromechanical systems (MEMS) power sensor based on measuring the power dissipated by intrinsic ohmic losses of a coplanar waveguide (CPW) signal line by thermopiles. In order to achieve ultra reflection losses, cold junctions of the thermopiles are covered with the CPW ground lines for depressing electromagnetic coupling effects and serving as hot sink. To increase the sensitivity, the CPW ground lines are suspended above hot junctions of the thermopiles for reducing thermal losses and the CPW dimension near the thermopiles is designed to increase the temperature of the hot junctions. This sensor is completely compatible with the GaAs monolithic microwave integrated circuits (MMIC) technology. Experiments show that this optimized power sensor has resulted in reflection losses of less than -24.3 dB up to 26 GHz, with insertion losses of less than 0.37 dB. For the input power of 0.5-300 mW, the good linearity of the output response is obtained and average sensitivities are more than 6.26 and 8.21 mV/W at 2 and 20 GHz, respectively.