基于GaAs MMIC技术的超反射损耗内联插入式微波MEMS功率传感器

Zhiqiang Zhang, X. Liao
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引用次数: 1

摘要

提出了一种基于热电堆测量共面波导(CPW)信号线固有欧姆损耗功耗的嵌入式插入式微波微机电系统(MEMS)功率传感器。为了达到超反射损耗,在热电堆冷端覆盖CPW接地线,抑制电磁耦合效应,起到热汇作用。为了提高灵敏度,将CPW接地线悬挂在热电堆热结的上方以减少热损失,并设计靠近热电堆的CPW尺寸以提高热结的温度。该传感器完全兼容GaAs单片微波集成电路(MMIC)技术。实验表明,优化后的功率传感器在26 GHz频段的反射损耗小于-24.3 dB,插入损耗小于0.37 dB。当输入功率为0.5 ~ 300 mW时,输出响应具有良好的线性度,2 GHz和20 GHz时的平均灵敏度分别大于6.26和8.21 mV/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An inline insertion microwave MEMS power sensor based on GaAs MMIC technology with ultra reflection losses
This paper proposes an inline insertion microwave microelectromechanical systems (MEMS) power sensor based on measuring the power dissipated by intrinsic ohmic losses of a coplanar waveguide (CPW) signal line by thermopiles. In order to achieve ultra reflection losses, cold junctions of the thermopiles are covered with the CPW ground lines for depressing electromagnetic coupling effects and serving as hot sink. To increase the sensitivity, the CPW ground lines are suspended above hot junctions of the thermopiles for reducing thermal losses and the CPW dimension near the thermopiles is designed to increase the temperature of the hot junctions. This sensor is completely compatible with the GaAs monolithic microwave integrated circuits (MMIC) technology. Experiments show that this optimized power sensor has resulted in reflection losses of less than -24.3 dB up to 26 GHz, with insertion losses of less than 0.37 dB. For the input power of 0.5-300 mW, the good linearity of the output response is obtained and average sensitivities are more than 6.26 and 8.21 mV/W at 2 and 20 GHz, respectively.
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