{"title":"近大气压x射线光电子能谱原位研究水吸附超薄GeO 2 /Ge和sio2 /Si结构","authors":"Kenta Arima","doi":"10.1380/JSSSJ.38.330","DOIUrl":null,"url":null,"abstract":"We carried out near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) measurements of water-adsorbed ultrathin GeO 2 films on Ge substrates, and the results were compared with those for SiO 2 films on Si. We obtained NAP-XPS spectra at relative humidity (RH) values of up to 〜 15 % and showed that the GeO 2 / Ge structures attract more water molecules than the SiO 2 / Si structures at RH above 〜 10 − 4 % . This is probably because water molecules infiltrate the GeO 2 films to form hydroxyls. Then we revealed positive charging of the water-adsorbed SiO 2 films by their interaction with X-rays. For the water-adsorbed GeO 2 films, we observed greater positive charging of the films, of which origin is discussed.","PeriodicalId":13075,"journal":{"name":"Hyomen Kagaku","volume":"28 1","pages":"330-335"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Water-Adsorbed Ultrathin GeO 2 /Ge and SiO 2 /Si Structure Studied In Situ by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy\",\"authors\":\"Kenta Arima\",\"doi\":\"10.1380/JSSSJ.38.330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We carried out near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) measurements of water-adsorbed ultrathin GeO 2 films on Ge substrates, and the results were compared with those for SiO 2 films on Si. We obtained NAP-XPS spectra at relative humidity (RH) values of up to 〜 15 % and showed that the GeO 2 / Ge structures attract more water molecules than the SiO 2 / Si structures at RH above 〜 10 − 4 % . This is probably because water molecules infiltrate the GeO 2 films to form hydroxyls. Then we revealed positive charging of the water-adsorbed SiO 2 films by their interaction with X-rays. For the water-adsorbed GeO 2 films, we observed greater positive charging of the films, of which origin is discussed.\",\"PeriodicalId\":13075,\"journal\":{\"name\":\"Hyomen Kagaku\",\"volume\":\"28 1\",\"pages\":\"330-335\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Hyomen Kagaku\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1380/JSSSJ.38.330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Hyomen Kagaku","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1380/JSSSJ.38.330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Water-Adsorbed Ultrathin GeO 2 /Ge and SiO 2 /Si Structure Studied In Situ by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy
We carried out near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) measurements of water-adsorbed ultrathin GeO 2 films on Ge substrates, and the results were compared with those for SiO 2 films on Si. We obtained NAP-XPS spectra at relative humidity (RH) values of up to 〜 15 % and showed that the GeO 2 / Ge structures attract more water molecules than the SiO 2 / Si structures at RH above 〜 10 − 4 % . This is probably because water molecules infiltrate the GeO 2 films to form hydroxyls. Then we revealed positive charging of the water-adsorbed SiO 2 films by their interaction with X-rays. For the water-adsorbed GeO 2 films, we observed greater positive charging of the films, of which origin is discussed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
