180nm CMOS技术的高效电压控制振荡器设计

Prachi Gupta, Manoj Kumar
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引用次数: 4

摘要

本文提出了四种基于单端延时单元的环形振荡器。通过改变电源电压1.4V至3.0V来控制环形振荡器的输出频率。主动负载的概念已被应用于所提出的电路中。第一个设计显示,饱和负载下频率变化范围为[4.50-1.40]GHz,相位噪声为- 87.79dBc/Hz @1MHz。第二种设计采用伪nmos逻辑实现了[6.26-2.85]GHz的频率变化。第三种设计的频率变化范围为[4.54-0.77]GHz,相位噪声为−85.38dBc/Hz @1MHz,非饱和负载下的调谐范围为141.8%。第四种设计为线性负载下的[2.66-2.38]GHz频率变化。利用基于180nm CMOS技术的SPICE在1.8V下进行了仿真。本文从频率、功耗、相位噪声、调谐范围等方面对3级、5级、7级设计进行了比较。所提出的方法具有低功耗、低相位噪声和宽调谐范围等优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power efficient voltage controlled oscillator design in 180nm CMOS technology
In this paper, four different single ended delay cells based ring oscillators have been presented. Output frequencies of ring oscillators have been controlled by varying the supply voltage 1.4V to 3.0V. The active load concept has been used in proposed circuits. First design shows frequency variation in the range [4.50–1.40] GHz with phase noise −87.79dBc/Hz @1MHz in saturated load. Second design shows frequency variation of [6.26–2.85] GHz with pseudo-NMOS logic. Third design shows frequency variation in the range [4.54–0.77] GHz with phase noise −85.38dBc/Hz @1MHz and tuning range of 141.8% in unsaturated load. Fourth design shows frequency variation of [2.66–2.38] GHz with linear load. Simulations have been performed using SPICE based on 180nm CMOS technology at 1.8V. The proposed designs of 3-Stage, 5-Stage, 7-Stage have been compared with previous work for frequency and power consumption, phase noise, tuning range. Proposed methods show the improvement with low power consumption, low phase noise and wide tuning range.
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