用分子束外延生长高质量假晶InAs/InP量子阱

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147420

M. Hopkinson, P. Claxton, J. David, G. Hill, M. Reddy, M. Pate

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引用次数: 0

摘要

讨论了用固体源分子束外延(MBE)生长井厚为5 ~ 70 AA的InAs/InP应变量子阱结构。在10 K下，这些结构在波长范围为1.0至约=2.1 μ m的范围内观察到光致发光。多量子阱p-i-n二极管的光电应用范围为1.0 ~ 2.0 μ m。本文介绍了inas通道MODFET器件的初步研究。

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High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy

The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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