利用卷积神经网络分析Kohn-Sham特征函数在掺杂半导体中金属-绝缘体跃迁模拟中的应用。

Y. Harashima, T. Mano, K. Slevin, T. Ohtsuki
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引用次数: 0

摘要

最近机器学习应用于凝聚态物理中的许多问题。许多建议的共同点是,通过使用简单示例的数据训练机器,然后使用机器对更复杂的示例进行预测,从而节省计算成本。卷积神经网络(CNN)是机器学习的工具之一,已被证明可以很好地评估无序系统中的特征函数。这里我们应用一个CNN评估Kohn-Sham形式获得的密度泛函理论(DFT)的模拟半导体掺杂的金属绝缘体转变。我们证明,当使用包含自旋的模拟本征函数时,使用忽略电子自旋的掺杂半导体模拟的本征函数训练的CNN成功地预测了临界浓度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of Kohn-Sham Eigenfunctions Using a Convolutional Neural Network in Simulations of the Metal-insulator Transition in Doped Semiconductors.
Machine learning has recently been applied to many problems in condensed matter physics. A common point of many proposals is to save computational cost by training the machine with data from a simple example and then using the machine to make predictions for a more complicated example. Convolutional neural networks (CNN), which are one of the tools of machine learning, have proved to work well for assessing eigenfunctions in disordered systems. Here we apply a CNN to assess Kohn-Sham eigenfunctions obtained in density functional theory (DFT) simulations of the metal-insulator transition of a doped semiconductor. We demonstrate that a CNN that has been trained using eigenfunctions from a simulation of a doped semiconductor that neglects electron spin successfully predicts the critical concentration when presented with eigenfunctions from simulations that include spin.
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