{"title":"a-Si:H/μc-Si:H异质结p-i-n太阳能电池性能的优化研究","authors":"Md Nazmul Islam, H. R. Ghosh","doi":"10.3329/dujs.v69i2.56488","DOIUrl":null,"url":null,"abstract":"In this work, the solar cell design parameters like- layer thickness, bandgap, donor and acceptor concentrations are varied to find optimum structure of a hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) heterojunction p-i-n solar cell. A thin a-Si:H p-layer of 1 to 5 nm followed by a thick a-Si:H i-layer of thickness 1400 to 1600 nm and then thin n-layer of thickness 1 to 5 nm with acceptor concentration of 102 cm−3 and donor concentration of 1020 cm−3 and the bandgaps of p-, i-, and n- layers with higher bandgaps closer to 2.2 eV for a-Si:H p-layer, 1.85 eV for a-Si:H i-layer, and 1.2 eV for μc-Si:H n-layer have showed better performances. The optimum cell has a JSC of 18.93 mA/cm2, VOC of 1095 mV, Fill factor of 0.7124, and efficiency of 14.77%. The overall external quantum efficiency of the numerically designed cell also remained very high from 85-95 % for wavelengths of 300-650 nm range. This indicates that the device will perform its best under both high and low frequency i.e. ultra-violet, near visible and visible light wavelengths.\nDhaka Univ. J. Sci. 69(2): 88-95, 2021 (July)","PeriodicalId":11280,"journal":{"name":"Dhaka University Journal of Science","volume":"23 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Enhancement of an a-Si:H/μc-Si:H Heterojunction p-i-n Solar Cell by Tuning the Device Parameters\",\"authors\":\"Md Nazmul Islam, H. R. Ghosh\",\"doi\":\"10.3329/dujs.v69i2.56488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the solar cell design parameters like- layer thickness, bandgap, donor and acceptor concentrations are varied to find optimum structure of a hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) heterojunction p-i-n solar cell. A thin a-Si:H p-layer of 1 to 5 nm followed by a thick a-Si:H i-layer of thickness 1400 to 1600 nm and then thin n-layer of thickness 1 to 5 nm with acceptor concentration of 102 cm−3 and donor concentration of 1020 cm−3 and the bandgaps of p-, i-, and n- layers with higher bandgaps closer to 2.2 eV for a-Si:H p-layer, 1.85 eV for a-Si:H i-layer, and 1.2 eV for μc-Si:H n-layer have showed better performances. The optimum cell has a JSC of 18.93 mA/cm2, VOC of 1095 mV, Fill factor of 0.7124, and efficiency of 14.77%. The overall external quantum efficiency of the numerically designed cell also remained very high from 85-95 % for wavelengths of 300-650 nm range. This indicates that the device will perform its best under both high and low frequency i.e. ultra-violet, near visible and visible light wavelengths.\\nDhaka Univ. J. Sci. 69(2): 88-95, 2021 (July)\",\"PeriodicalId\":11280,\"journal\":{\"name\":\"Dhaka University Journal of Science\",\"volume\":\"23 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Dhaka University Journal of Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3329/dujs.v69i2.56488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dhaka University Journal of Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3329/dujs.v69i2.56488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Enhancement of an a-Si:H/μc-Si:H Heterojunction p-i-n Solar Cell by Tuning the Device Parameters
In this work, the solar cell design parameters like- layer thickness, bandgap, donor and acceptor concentrations are varied to find optimum structure of a hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) heterojunction p-i-n solar cell. A thin a-Si:H p-layer of 1 to 5 nm followed by a thick a-Si:H i-layer of thickness 1400 to 1600 nm and then thin n-layer of thickness 1 to 5 nm with acceptor concentration of 102 cm−3 and donor concentration of 1020 cm−3 and the bandgaps of p-, i-, and n- layers with higher bandgaps closer to 2.2 eV for a-Si:H p-layer, 1.85 eV for a-Si:H i-layer, and 1.2 eV for μc-Si:H n-layer have showed better performances. The optimum cell has a JSC of 18.93 mA/cm2, VOC of 1095 mV, Fill factor of 0.7124, and efficiency of 14.77%. The overall external quantum efficiency of the numerically designed cell also remained very high from 85-95 % for wavelengths of 300-650 nm range. This indicates that the device will perform its best under both high and low frequency i.e. ultra-violet, near visible and visible light wavelengths.
Dhaka Univ. J. Sci. 69(2): 88-95, 2021 (July)