CdTe/CdS薄膜太阳能电池后沉积工艺分析

Solar Cells Pub Date : 1991-12-01 DOI:10.1016/0379-6787(91)90095-7

Brian E. McCandless, Robert W. Birkmire

{"title":"CdTe/CdS薄膜太阳能电池后沉积工艺分析","authors":"Brian E. McCandless, Robert W. Birkmire","doi":"10.1016/0379-6787(91)90095-7","DOIUrl":null,"url":null,"abstract":"<div>A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 °C heat treatment with CdCl2 restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdSxTe1−x layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (<math><mtext>V</mtext><msub><mi></mi><mn>oc</mn></msub></math>) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.</div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"31 6","pages":"Pages 527-535"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90095-7","citationCount":"100","resultStr":"{\"title\":\"Analysis of post deposition processing for CdTe/CdS thin film solar cells\",\"authors\":\"Brian E. McCandless, Robert W. Birkmire\",\"doi\":\"10.1016/0379-6787(91)90095-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 °C heat treatment with CdCl2 restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdSxTe1−x layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (<math><mtext>V</mtext><msub><mi></mi><mn>oc</mn></msub></math>) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.</div>\",\"PeriodicalId\":101172,\"journal\":{\"name\":\"Solar Cells\",\"volume\":\"31 6\",\"pages\":\"Pages 527-535\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0379-6787(91)90095-7\",\"citationCount\":\"100\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar Cells\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0379678791900957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Cells","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0379678791900957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 100

摘要

开发了一种优化物理气相沉积CdTe/CdS薄膜太阳能电池效率的沉积后工艺，并分析了各个工艺步骤对材料和器件性能的影响。用CdCl2进行400°C热处理，使CdTe发生结构重构，晶粒尺寸增大，晶体取向改变。结构和光学测量表明，在热处理过程中，硫和碲的相互扩散导致CdSxTe1−x层的形成，其带隙比CdTe更窄。在优化过程的各个阶段对CdTe器件的双面电流电压和量子效率进行了分析，显示了器件从p-i-n结构向异质结结构的演变。化学处理改善了开路电压(Voc)和Cu/Au与CdTe的接触。该优化过程可应用于采用不同方法沉积CdTe和CdS的电池。

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Analysis of post deposition processing for CdTe/CdS thin film solar cells

A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 °C heat treatment with CdCl₂ restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS_xTe_1−x layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage ( $V_{oc}$ ) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.

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Solar Cells

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