低介电常数PECVD沉积SiCF薄膜的介电性能

ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132) Pub Date : 1998-06-22 DOI:10.1109/ICSD.1998.709267

K. Kim, J. Lim, W. Ryu, J. Lee

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引用次数: 0

摘要

采用等离子体增强化学气相沉积(PECVD)技术，在13.56 MHz射频平行板电极下，以2% SiH/sub - 4//N/sub - 2/和CF/sub - 4/两种气体沉积低介电常数氟化硅膜。研究了射频功率、腔压和气体成分对沉积速率的影响，并利用AES、XPS、AFM和SEM对膜的形貌进行了测试。通过电容-电压测量得到薄膜的介电常数为2.3。

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Dielectric properties of SiCF film deposited by PECVD with low dielectric constants

Low dielectric constant fluorocarbonated siliceous films were deposited by PECVD (plasma enhanced chemical vapor deposition) using 2% SiH/sub 4//N/sub 2/ and CF/sub 4/ gases in the chamber with parallel plate electrode of 13.56 MHz RF. The effects of RF power, chamber pressure and gas composition on the deposition rate were studied and the morphology of the films was tested by AES, XPS, AFM and SEM. The dielectric constant of the film determined by the capacitance-voltage measurements was 2.3.

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ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)

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