Austin J. Snyder, Jacob M. Gibbs, Manoj K. Jamarkattel, A. Phillips, M. Heben
{"title":"氟掺杂对MgxZn1-xO发射极掺杂的控制","authors":"Austin J. Snyder, Jacob M. Gibbs, Manoj K. Jamarkattel, A. Phillips, M. Heben","doi":"10.1109/PVSC45281.2020.9300810","DOIUrl":null,"url":null,"abstract":"Doping control of the emitter is critically important to high performance thin film photovoltaic devices. Here, we deposit magnesium zinc oxide (MZO) thin films for use as the emitter of CdTe-based devices through cosputtering of ZnO and MgO or MgF. The bandgap and sheet resistance of the MZO films are measured before and after the films are thermally processed under vacuum or in He environments. Through annealing of the films, they become conductive, but little bandgap or sheet resistance differences can be determined between the films deposited using the MgO target or the MgF target. Devices will be completed to determine if the addition of fluorine to the MZO film affects the emitter doping during device processing.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"18 1","pages":"1863-1865"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Doping Control of MgxZn1-xO Emitter through Fluorine Incorporation\",\"authors\":\"Austin J. Snyder, Jacob M. Gibbs, Manoj K. Jamarkattel, A. Phillips, M. Heben\",\"doi\":\"10.1109/PVSC45281.2020.9300810\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Doping control of the emitter is critically important to high performance thin film photovoltaic devices. Here, we deposit magnesium zinc oxide (MZO) thin films for use as the emitter of CdTe-based devices through cosputtering of ZnO and MgO or MgF. The bandgap and sheet resistance of the MZO films are measured before and after the films are thermally processed under vacuum or in He environments. Through annealing of the films, they become conductive, but little bandgap or sheet resistance differences can be determined between the films deposited using the MgO target or the MgF target. Devices will be completed to determine if the addition of fluorine to the MZO film affects the emitter doping during device processing.\",\"PeriodicalId\":6773,\"journal\":{\"name\":\"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"18 1\",\"pages\":\"1863-1865\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC45281.2020.9300810\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC45281.2020.9300810","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Doping Control of MgxZn1-xO Emitter through Fluorine Incorporation
Doping control of the emitter is critically important to high performance thin film photovoltaic devices. Here, we deposit magnesium zinc oxide (MZO) thin films for use as the emitter of CdTe-based devices through cosputtering of ZnO and MgO or MgF. The bandgap and sheet resistance of the MZO films are measured before and after the films are thermally processed under vacuum or in He environments. Through annealing of the films, they become conductive, but little bandgap or sheet resistance differences can be determined between the films deposited using the MgO target or the MgF target. Devices will be completed to determine if the addition of fluorine to the MZO film affects the emitter doping during device processing.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
