尺寸控制纳米晶si / sio2超晶格结构中铒离子发光的高效敏化

Physics Letters Pub Date : 2004-04-01 DOI:10.1063/1.1690465
V. Timoshenko, M. Lisachenko, B. Kamenev, O. Shalygina, P. Kashkarov, J. Heitmann, Michael Schmidt, M. Zachrias
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引用次数: 36

摘要

对未掺杂和掺铒的可控尺寸纳米晶Si/SiO2超晶格结构的光致发光(PL)对比研究表明,Si纳米晶的光激发可以完全转移到周围SiO2中的Er3+离子上,在1.5 μm处产生强PL线。掺铒结构的PL产率随着激发光子能量的增加和纳米晶体尺寸的减小而增加。这种er相关PL的高效敏化是由Si纳米晶体中的激子与处于高激发态的邻近Er3+离子之间的强耦合所解释的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
HIGHLY EFFICIENT SENSITIZING OF ERBIUM ION LUMINESCENCE IN SIZE-CONTROLLED NANOCRYSTALLINE SI/SIO2 SUPERLATTICE STRUCTURES
Comparative studies of photoluminescence (PL) of undoped and Er-doped size-controlled nanocrystalline Si/SiO2 superlattice structures show that the optical excitation of Si nanocrystals can be completely transferred to the Er3+ ions in surrounding SiO2, resulting in a strong PL line at 1.5 μm. The PL yield of the Er-doped structure increases for higher photon energy of excitation and for smaller nanocrystal sizes. This highly efficient sensitizing of the Er-related PL is explained by a strong coupling between excitons confined in Si nanocrystals and neighboring Er3+ ions in their upper excited states.
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