不同ITO触点电子亲和度掺杂a-Si:H层中悬垂键缺陷的影响分析

IF 0.6 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Informacije Midem-Journal of Microelectronics Electronic Components and Materials Pub Date : 2022-08-04 DOI:10.33180/infmidem2022.206

引用次数: 0

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts

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来源期刊

Informacije Midem-Journal of Microelectronics Electronic Components and Materials 工程技术-材料科学：综合

CiteScore

1.80

自引率

0.00%

发文量

审稿时长

>12 weeks

期刊介绍： Informacije MIDEM publishes original research papers in the fields of microelectronics, electronic components and materials. Review papers are published upon invitation only. Scientific novelty and potential interest for a wider spectrum of readers is desired. Authors are encouraged to provide as much detail as possible for others to be able to replicate their results. Therefore, there is no page limit, provided that the text is concise and comprehensive, and any data that does not fit within a classical manuscript can be added as supplementary material. Topics of interest include: Microelectronics, Semiconductor devices, Nanotechnology, Electronic circuits and devices, Electronic sensors and actuators, Microelectromechanical systems (MEMS), Medical electronics, Bioelectronics, Power electronics, Embedded system electronics, System control electronics, Signal processing, Microwave and millimetre-wave techniques, Wireless and optical communications, Antenna technology, Optoelectronics, Photovoltaics, Ceramic materials for electronic devices, Thick and thin film materials for electronic devices.