A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi
{"title":"基于聚(3-己基噻吩):石墨烯复合材料的溶液加工柔性光电二极管","authors":"A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi","doi":"10.1063/1.5113057","DOIUrl":null,"url":null,"abstract":"The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"353 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Solution processed flexible photodiode based on poly(3-hexylthiophene):graphene composite\",\"authors\":\"A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi\",\"doi\":\"10.1063/1.5113057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. 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Solution processed flexible photodiode based on poly(3-hexylthiophene):graphene composite
The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...
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