n型硅太阳电池Al-p+发射极合金化冷却效果研究

Tseng-Jung Chang, Sean H. T. Chen, Chia-yu Shen, Shao-Peng Su, Li-Wei Cheng
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引用次数: 1

摘要

在这项研究中,我们展示了一种利用市售铝浆、丝网印刷技术和带式输送机炉来优化Al-p+发射极形成的合金化工艺的概念。在慢冷合金条件下,得到了更均匀、更适形的Al-p+发射体。结果表明,在不同合金化型材形成的8μm厚发射体中,冷却速度适中的条件下joe较低。在适当爬坡的长时间冷却条件下,未钝化的p+的jo0e为217fA/cm2,对应于669mV的隐含Voc。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of cooling effect on alloying Al-p+ emitter for n-type silicon solar cell
In this study, we demonstrate a concept for optimizing the alloying process for Al-p+ emitter formation with a commercially available aluminum paste, screen-printing technology and belt-conveyor furnace. A more uniform and conformal Al-p+ emitter is obtained at the sample with slow cooling condition of alloying process. Among the 8μm-thick emitters formed by various alloying profiles, the result shows the condition with moderate cooling rate leads to lower J0e. For long cooling condition with proper ramping, the J0e of non-passivated p+ is at 217fA/cm2 which corresponds to an implied Voc at 669mV.
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