结型和无结型多晶硅晶体管模拟性能的定性比较研究

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117609

Shih-Wei Wang, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Chia-Hsien Lin, Hsuan-Hsu Chen, Po-Hsieh Lin, Chih-Hsuan Tai, C. Pai

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引用次数: 1

摘要

在这项工作中，对有结和无结多晶硅tft的模拟性能进行了定性比较研究。通过数值模拟，我们发现在固定的IDS下，结型多晶硅TFT的gm和gD都高于无结型多晶硅TFT。在相同S/D掺杂浓度下，无结多晶硅TFT具有较好的短沟道性能。因此，可以证明无结多晶硅TFT是AMLCD和AMOLED应用的良好选择。

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A qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs

In this work, a qualitative comparison study of analog performance of junction and junctionless poly-Si TFTs is carefully investigated. According to numerical simulations, we find out that both gm and gD of junction poly-Si TFT are higher than the junctionless poly-Si TFT at a fixed IDS. Based on the same S/D doping concentration the junctionless poly-Si TFT can have a better short-channel behavior than its counterpart. Thus, it can be proved that a junctionless poly-Si TFT is a good option for AMLCD and AMOLED Applications.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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