{"title":"Ni-Cu薄膜扩散偶的相互扩散和应力发展","authors":"J. Sheng, U. Welzel, E. Mittemeijer","doi":"10.1524/zksu.2009.0036","DOIUrl":null,"url":null,"abstract":"Thin film Ni-Cu diffusion couples (individual layer thicknesses: 50 mn) have been prepared by direct-current magnetron sputtering on silicon substrates. The microstructural development and the stress evolution during diffusion annealing have been investigated employing ex-situ and in-situ X-ray diffraction, transmission electron microscopy and Auger-electron spectroscopy (in combination with sputter-depth profiling). Annealing at relatively low temperatures (175 degrees C to 350 degrees C) for durations up to about 100 hours results in considerable diffusional intermixing. In addition to thermal stresses due to mismatch of the coefficients of thermal expansion of layers and substrate, tensile stress contributions in the sublayers arise during diffusion anneals. The obtained stress data are discussed in terms of possible mechanisms of stress generation.","PeriodicalId":23897,"journal":{"name":"Zeitschrift Fur Kristallographie","volume":"8 1","pages":"247-252"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Interdiffusion and stress development in Ni-Cu thin film diffusion couples\",\"authors\":\"J. Sheng, U. Welzel, E. Mittemeijer\",\"doi\":\"10.1524/zksu.2009.0036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin film Ni-Cu diffusion couples (individual layer thicknesses: 50 mn) have been prepared by direct-current magnetron sputtering on silicon substrates. The microstructural development and the stress evolution during diffusion annealing have been investigated employing ex-situ and in-situ X-ray diffraction, transmission electron microscopy and Auger-electron spectroscopy (in combination with sputter-depth profiling). Annealing at relatively low temperatures (175 degrees C to 350 degrees C) for durations up to about 100 hours results in considerable diffusional intermixing. In addition to thermal stresses due to mismatch of the coefficients of thermal expansion of layers and substrate, tensile stress contributions in the sublayers arise during diffusion anneals. The obtained stress data are discussed in terms of possible mechanisms of stress generation.\",\"PeriodicalId\":23897,\"journal\":{\"name\":\"Zeitschrift Fur Kristallographie\",\"volume\":\"8 1\",\"pages\":\"247-252\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Zeitschrift Fur Kristallographie\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1524/zksu.2009.0036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Chemistry\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Zeitschrift Fur Kristallographie","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1524/zksu.2009.0036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Chemistry","Score":null,"Total":0}
Interdiffusion and stress development in Ni-Cu thin film diffusion couples
Thin film Ni-Cu diffusion couples (individual layer thicknesses: 50 mn) have been prepared by direct-current magnetron sputtering on silicon substrates. The microstructural development and the stress evolution during diffusion annealing have been investigated employing ex-situ and in-situ X-ray diffraction, transmission electron microscopy and Auger-electron spectroscopy (in combination with sputter-depth profiling). Annealing at relatively low temperatures (175 degrees C to 350 degrees C) for durations up to about 100 hours results in considerable diffusional intermixing. In addition to thermal stresses due to mismatch of the coefficients of thermal expansion of layers and substrate, tensile stress contributions in the sublayers arise during diffusion anneals. The obtained stress data are discussed in terms of possible mechanisms of stress generation.
期刊介绍:
Zeitschrift für Kristallographie International journal for structural, physical, and chemical aspects of crystalline materials ISSN 0044-2968 Founded in 1877 by Paul Groth Zeitschrift für Kristallographie is one of the world’s oldest scientific journals. In original papers, letters and review articles it presents results of theoretical or experimental study on crystallography.