a-Si:H和a-Ge:H稳定性提高与微观结构性能的关系

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.519990

T. Haage, S. Bauer, B. Schroder, H. Oechsner

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引用次数: 0

摘要

本文报道了辉光放电和热丝沉积a-Si:H薄膜稳定性的对比研究。利用椭偏光谱测量和基于四面体模型的数据解释，我们研究了薄膜的微观结构特性。我们发现，通过一种高密度低氢含量的沉积工艺，可以生长高质量的材料，从而显著提高了a- si:H薄膜的稳定性。a-Si:H的结果与sp-a-Ge:H的相似结果得到了证实。我们首次证明了亚稳性与表面(SiH/sub 2/， (SiH)/sub x/)氢键构型的存在无关。

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Correlation between improved stability and microstructural properties of a-Si:H and a-Ge:H

In this paper we report on comparative investigations concerning the stability of glow discharge and hot wire deposited a-Si:H films. Using spectroscopic ellipsometry measurements and a data interpretation based on a tetrahedron model we investigated the microstructural properties of the films. We found that the stability of a-Si:H films is significantly increased by a deposition process guided in a way that high quality material can be grown with high density and low hydrogen content. The a-Si:H results are confirmed by similar results obtained on sp-a-Ge:H. For the first time we have shown that metastability is not connected with the existence of surface like (SiH/sub 2/, (SiH)/sub x/) hydrogen bonding configurations.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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