{"title":"高效氮化镓HEMT同步整流器与一个倍频带宽的无线电源应用","authors":"S. Abbasian, T. Johnson","doi":"10.1109/MWSYM.2016.7540080","DOIUrl":null,"url":null,"abstract":"This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"High efficiency GaN HEMT synchronous rectifier with an octave bandwidth for wireless power applications\",\"authors\":\"S. Abbasian, T. Johnson\",\"doi\":\"10.1109/MWSYM.2016.7540080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.\",\"PeriodicalId\":6554,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave Symposium (IMS)\",\"volume\":\"56 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave Symposium (IMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2016.7540080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2016.7540080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High efficiency GaN HEMT synchronous rectifier with an octave bandwidth for wireless power applications
This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
