Синтез методом молекулярно-пучковой эпитаксии и свойства InAs-квантовых точек в теле AlGaAs нитевидных нанокристаллов

We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.