采用SH-SAW的P4J-3型浸入式液相传感器

T. Kogai, H. Yatsuda, S. Shiokawa
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引用次数: 3

摘要

本文介绍了一种基于SH-SAW的可直接浸入液体的传感器装置。传感器装置由36Y-X LiTaO3上的双通道SH-SAW延迟线组成。这些idt被环氧树脂墙包围,其高度为50微米,厚度为160微米。由于环氧树脂壁是通过使用厚环氧基光刻胶的光刻技术构建的,因此壁的厚度可以最小化,因此由于壁引起的SH-SAW传播损失可以最小化。用环氧胶粘剂粘在墙上的玻璃罩。然后,可以实现在idt上方的空腔,并且可以将idt与液体完全隔离。本文介绍了36Y-X LiTaO3上50 MHz浸入式SH-SAW传感器的实验结果。由于SH-SAW在低介电常数的液体中在未金属化的传播区传播,由于表面掠掠体波激发而衰减,因此得到的介电常数和电导率与精确值略有不同。为了改善这一缺陷,提出了一种补偿方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
P4J-3 Dip-Type Liquid-Phase Sensor Using SH-SAW
This paper describes an SH-SAW based sensor device which can be directly dipped into a liquid. The sensor device is composed of a two-channel SH-SAW delay line on a 36Y-X LiTaO3. Those IDTs are surrounded with epoxy walls with a 50 mum height and a 160 mum thickness. Since the epoxy walls are constructed by a photo-lithography technique using a thick epoxy based photo resist, the thickness of wall can be minimized and as a result the SH-SAW propagation loss due to the walls can be minimized. Glass covers with an epoxy adhesive are attached onto the walls. Then air-cavities above the IDTs can be achieved and the IDTs can be perfectly isolated from the liquid. In this paper, experimental results of 50 MHz dip-type SH-SAW sensors on 36Y-X LiTaO3 are presented. Since the SH-SAW which propagates on the un-metallized propagation area in a liquid with a low permittivity attenuates due to surface skimming bulk wave excitation, the obtained permittivity and conductivity are slightly different from the exact values. In order to improve this drawback, a compensation method is presented.
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