一种无射频扼流圈和无死区时间要求的类CMOS逆变器d /E类功率放大器

G. Singh, Nagarjuna Nallam
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引用次数: 2

摘要

提出了一种类CMOS逆变器的d /E类开关功率放大器(PA)。所提出的放大器工作在e类和de类PAs之间。为了使e类PA正常工作,必须使用电感值大、自谐振频率高的射频扼流圈(RFC)。de类PA不需要RFC,但需要两个开关的OFF-ON转换之间的死区时间。所提出的PA使用两个互补的交换机,其操作既不需要RFC也不需要死区时间。对于相同的电源电压和负载电阻,所提出的PA中每个开关器件上的电压应力小于e类PA中的电压应力。给出了一个输出功率为+20 dBm,工作频率为2.45 GHz的原型放大器的设计和仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A CMOS Inverter-Like Class-D/E Power Amplifier with No RF-Choke and No Dead-Time Requirement
This paper presents a CMOS inverter-like Class-D/E switching power amplifier (PA). The proposed amplifier operates in-between Class-E and Class-DE PAs. For proper operation of a Class-E PA, an RF choke (RFC) with large inductance value and high self-resonant frequency is necessary. A Class-DE PA does not require an RFC but requires a dead-time between OFF-ON transitions of the two switches. The proposed PA uses two complementary switches and requires neither an RFC nor a dead-time for its operation. For the same supply voltage and the load resistance, the voltage stress on each switching device in the proposed PA is less than the voltage stress in a Class-E PA. Design and simulation results of a prototype PA at 2.45 GHz with +20 dBm output power are presented.
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