直流配电中固态断路器用SiC mosfet的评价

L. Ravi, D. Dong, R. Burgos, Xiaoqing Song, P. Cairoli
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引用次数: 5

摘要

固态断路器(sscb)采用功率半导体器件,在紧凑可靠的封装中提供快速的故障电流中断(微秒范围内)。SiC功率mosfet是sscb的一个有吸引力的选择,提供低导通损耗以提高整体效率。本文对SiC mosfet进行了评估,以探讨其在直流配电应用中的性能和潜在限制因素。为此,利用样机进行了浪涌电流实验,研究了故障瞬变过程中电路的运行情况。SSCB系统的设计考虑因素包括SiC MOSFET和电压箝位电路,预计将有助于基于SiC的SSCB单元的设计和构建。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of SiC MOSFETs for Solid State Circuit Breakers in DC Distribution Applications
Solid state circuit breakers (SSCBs) employ power semiconductor devices to provide fast fault current interruption (in the microsecond range) in a compact and reliable package. SiC power MOSFETs are an attractive option for SSCBs offering low conduction losses for improved overall efficiency. This paper presents an evaluation of SiC MOSFETs to explore their capabilities and potential limiting factors for SSCBs in dc distribution applications. To this end, surge current experiments are performed using a prototype to investigate the circuit operation during fault transients. Design considerations for the SSCB system including SiC MOSFET and voltage clamping circuit are developed expected to aid in the design and construction of SiC-based SSCB units.
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