先进晶体管结构中寄生电阻元件的直接分割测量

Zuoguang Liu, Heng Wu, Chen Zhang, Xin He Miao, Huimei Zhou, R. Southwick, T. Yamashita, D. Guo
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引用次数: 0

摘要

More-Moore逻辑器件技术路线图建议横向/垂直栅极全能(LGAA /VGAA)器件架构超越finfet,以进一步扩展和性能。在极窄的栅极螺距下,寄生电阻显著影响器件的性能。建立了对finfet中电阻分量的直接分块测量方法。进一步缩放栅极间距的堆叠LGAA器件表现出高S/D串联电阻和接触电阻,可以用类似的开尔文测量进行划分。VGAA晶体管的结构与finfet或LGAAs非常不同。它们的底部和顶部S/D不对称导致了显著的扩散阻力和不同的接触电阻值。需要对底部和顶部的电阻进行单独划分。本文介绍了电阻分量划分的VGAA测试结构和测量方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct Partition Measurement of Parasitic Resistance Components in Advanced Transistor Architectures
More-Moore logic device technology roadmap suggests Lateral/Vertical Gate-All-Around (LGAA /VGAA) device architectures beyond FinFETs for further scaling and performance. At extremely scaled gate pitches, parasitic resistance significant impacts the performance of the devices. Direct partition measurement of the resistance components in FinFETs has been established. Stacked LGAA devices at further scaled gate pitches exhibit high S/D series resistance and contact resistance which can be partitioned with similar Kelvin measurement. VGAA transistors have a very different structure from FinFETs or LGAAs. Their asymmetric bottom and top S/D results in significant spreading resistance and different contact resistance values. Separate partition of the resistances at the bottom and top is needed. In this paper, VGAA test structures and measurement methodology is introduced for partitioning the resistance components.
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