半导体激光器:最新进展与展望

K. Ebeling
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引用次数: 0

摘要

在过去的几年中,半导体激光器在性能方面取得了令人兴奋的进展,在光通信和数据存储、计量、显示技术、材料加工或固态激光泵浦等方面具有潜在的应用前景。利用氮化镓基器件,半导体激光发射的短波长极限已经被推到了410纳米。在完善的InAlGaAs材料系统中,高功率广域激光器提供了几个10 W的连续输出功率,功率转换效率高于60%。波束轮廓控制是在混合或单片主振荡器功率放大器(MOPA)配置中获得的。通信激光二极管具有40 GHz的小信号电流调制带宽,适用于20 Gbit/s的数据传输。据报道,新型选择性氧化垂直腔面发射激光二极管(VCSELs)在1 mW输出功率下具有小于10 μ A的极低激光阈值电流以及超过50%的转换效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semiconductor Lasers: Recent Advancesand Prospects
Semiconductor lasers have made exciting progress in performance over the last few years with prospective applications e.g. in optical communications and data storage, metrology, display technology, material processing, or solid state laser pumping. The short wavelength limit of semiconductor laser emission has now been pushed to 410 nm using GaN based devices. High power broad area lasers in the well established InAlGaAs material system offer several 10 W continuous output power at power conversion efficiencies above 60%. Beam profile control is obtained in hybrid or monolithic master oscillator power amplifier (MOPA) configurations. Communication laser diodes show small signal current modulation bandwidths 40 GHz and are applied for 20 Gbit/s data transmission. Extremely low laser threshold currents of less than 10µA as well as more than 50% conversion efficiency at 1 mW output power are reported from novel selectively oxidized vertical cavity surface emitting laser diodes (VCSELs).
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