{"title":"量子计算中粒子光学系统的展望","authors":"V. A. Zhukov, M. M. Nesterov","doi":"10.1117/12.517867","DOIUrl":null,"url":null,"abstract":"There is investigated theoretical possibility to make quantum computer elements by means of Ion Lithography with resolution of details about 2 nm. The axisymmetrical combined immersion lenses of three types are investigated for this aim in a whole range of working regimes from the edge of pure electrostatic regime to the edge of combined mirror regime. Simple analytical approximations are derived for four main ion-optical parameters of combined lenses: focal length f, coefficient of chromatic aberration Cd, coefficient of spherical aberration of the third order Cs, and Amper-turns in the magnetic coil of combined lens NI. These parameters are expressed in form of functions of dimensionless quantity (formula available in paper) is the energy of ions at the lithographic target and W0 is the initial energy of ions. It is shown that axial aberrations of combined lenses (Cc and Cs) and focal length f have a maximum under absence of magnetic field (when lenses are pure electrostatic). It is shown that under ττ yeilds 0 parameters Cc, Cs, f and NI, as functions of quantity τ, take forms: Cc~τ1/6, Cs~τ1/4, f~τ1/3, NI~τ(-1/2). It is shown also that the Ion Lithographic image (by using heavy ions in non-resist regime) could have 2*1012 pixels under resoltuion 2nm in the frame 3×3mm2.","PeriodicalId":90714,"journal":{"name":"Quantum bio-informatics V : proceedings of the quantum bio-informatics 2011, Tokyo University of Science, Japan, 7-12 March 2011. Quantum Bio-Informatics (Conference) (5th : 2011 : Tokyo, Japan)","volume":"10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2003-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Perspectives of particle-optical systems in quantum computing\",\"authors\":\"V. A. Zhukov, M. M. Nesterov\",\"doi\":\"10.1117/12.517867\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is investigated theoretical possibility to make quantum computer elements by means of Ion Lithography with resolution of details about 2 nm. The axisymmetrical combined immersion lenses of three types are investigated for this aim in a whole range of working regimes from the edge of pure electrostatic regime to the edge of combined mirror regime. Simple analytical approximations are derived for four main ion-optical parameters of combined lenses: focal length f, coefficient of chromatic aberration Cd, coefficient of spherical aberration of the third order Cs, and Amper-turns in the magnetic coil of combined lens NI. These parameters are expressed in form of functions of dimensionless quantity (formula available in paper) is the energy of ions at the lithographic target and W0 is the initial energy of ions. It is shown that axial aberrations of combined lenses (Cc and Cs) and focal length f have a maximum under absence of magnetic field (when lenses are pure electrostatic). It is shown that under ττ yeilds 0 parameters Cc, Cs, f and NI, as functions of quantity τ, take forms: Cc~τ1/6, Cs~τ1/4, f~τ1/3, NI~τ(-1/2). It is shown also that the Ion Lithographic image (by using heavy ions in non-resist regime) could have 2*1012 pixels under resoltuion 2nm in the frame 3×3mm2.\",\"PeriodicalId\":90714,\"journal\":{\"name\":\"Quantum bio-informatics V : proceedings of the quantum bio-informatics 2011, Tokyo University of Science, Japan, 7-12 March 2011. Quantum Bio-Informatics (Conference) (5th : 2011 : Tokyo, Japan)\",\"volume\":\"10 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum bio-informatics V : proceedings of the quantum bio-informatics 2011, Tokyo University of Science, Japan, 7-12 March 2011. Quantum Bio-Informatics (Conference) (5th : 2011 : Tokyo, Japan)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.517867\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum bio-informatics V : proceedings of the quantum bio-informatics 2011, Tokyo University of Science, Japan, 7-12 March 2011. Quantum Bio-Informatics (Conference) (5th : 2011 : Tokyo, Japan)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.517867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Perspectives of particle-optical systems in quantum computing
There is investigated theoretical possibility to make quantum computer elements by means of Ion Lithography with resolution of details about 2 nm. The axisymmetrical combined immersion lenses of three types are investigated for this aim in a whole range of working regimes from the edge of pure electrostatic regime to the edge of combined mirror regime. Simple analytical approximations are derived for four main ion-optical parameters of combined lenses: focal length f, coefficient of chromatic aberration Cd, coefficient of spherical aberration of the third order Cs, and Amper-turns in the magnetic coil of combined lens NI. These parameters are expressed in form of functions of dimensionless quantity (formula available in paper) is the energy of ions at the lithographic target and W0 is the initial energy of ions. It is shown that axial aberrations of combined lenses (Cc and Cs) and focal length f have a maximum under absence of magnetic field (when lenses are pure electrostatic). It is shown that under ττ yeilds 0 parameters Cc, Cs, f and NI, as functions of quantity τ, take forms: Cc~τ1/6, Cs~τ1/4, f~τ1/3, NI~τ(-1/2). It is shown also that the Ion Lithographic image (by using heavy ions in non-resist regime) could have 2*1012 pixels under resoltuion 2nm in the frame 3×3mm2.