基于载流子数波动理论的mosfet漏极电流失配一致性模型

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512) Pub Date : 2004-05-23 DOI:10.1109/ISCAS.2004.1329471

H. Klimach, A. Arnaud, M. C. Schneider, C. Galup-Montoro

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引用次数: 11

摘要

本文提出了一种精确的MOS晶体管匹配计算方法。我们的模型基于精确的基于物理的MOSFET模型，允许评估工艺参数的不匹配，并且对任何操作区域都有效。在1.2 /spl μ m CMOS技术上实现的晶体管测试组上的实验结果证实了本工作的理论发展。

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Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

This work presents an approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 /spl mu/m CMOS technology corroborate the theoretical development of this work.

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来源期刊

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)

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