工业相关硒化炉中Ga/In在Cu(In,Ga)Se2中相互扩散的原位XRD研究

R. Aninat, F. Van den Bruele, P. Tinnemans, J. Schermer, J. Emmelkamp, E. Vlieg, M. Theelen, M. van der Vleuten, H. Linden
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引用次数: 0

摘要

介绍了一种定制的、高度通用的、具有原位XRD能力的硒化炉。模仿我们在TNO/Solliance基线中使用的研发规模炉,它仅使用元素硫化物,并可以控制商业设置中无法访问的一系列工艺参数。它还允许快速加热速率(10分钟内可达到600°C)和冷却速率(10分钟内从600°C降至300°C),以模拟多个(3+)加热室。现场x射线衍射装置与炉相结合,可以实时监测样品中发生的相变。利用该装置,我们对溅射前驱体进行了两次硒化实验,并观察了工艺参数对富ga区和富in区相互扩散的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-situ XRD study of Ga/In interdiffusion in Cu(In,Ga)Se2 in an industrially relevant selenization furnace
A custom-made, highly versatile and industrially-relevant selenisation furnace with in situ XRD capabilities is presented. Mimicking an R&D scale furnace used in our baseline at TNO/Solliance, it uses only elemental chalcogens and gives control over a wide set of process parameters not accessible in commercial setups. It additionally allows fast heating rates (600°C can be reached in 10 minutes) and cooling rates (10 minutes to go down from 600°C to 300°C, to mimic multiple (3+) heated chambers. An in-situ X-Ray Diffraction setup is coupled with the furnace and allows live monitoring of the phase transitions occurring in the sample. Using this setup, we carry out two selenisation experiments on sputtered precursors and observe the effect of process parameters on the interdiffusion between Ga-rich and In-rich regions.
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