在液氮中放电工艺在铝表面形成氮化铝膜

IF 0.5 4区材料科学 Q4 METALLURGY & METALLURGICAL ENGINEERING

Journal of The Japan Institute of Metals Pub Date : 2017-01-01 DOI:10.2320/JINSTMET.J2017017

Masashi Yoshida, R. Ichiki, S. Kanazawa, S. Yamazaki, Noah Utsumi

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引用次数: 0

摘要

采用液氮放电工艺，在极短的时间内在铝表面形成氮化铝膜。该工艺制备的薄膜厚度范围为10 ~ 20µm，时间变化范围为0 ~ 20µm。12和1。2 ks。该薄膜由AlN和︲氧化氮化铝(AlON)组成，具有复杂的结构。膜的硬度范围为778 ~ 2333 HV，薄膜中存在裂纹、孔洞等微缺陷以及AlON的存在影响了膜的硬度。AlON的存在使硬度增强。(doi: 10

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Formation of Aluminum Nitride Films on Aluminum Surface by an Electric Discharge Process in Liquid Nitrogen

Formation of aluminum nitride （ AlN ） ﬁlms on aluminum surfaces has been achieved by an electric discharge process in liquid nitrogen in very short time. The thickness of the ﬁlm produced by this process ranged 10 and 20 µ m for time varying between 0 . 12 and 1 . 2 ks. The ﬁlm was composed of AlN and Aluminum ︲ Oxynitride （ AlON ） and was found to have a complex structure. The ﬁlm hardness ranged from 778 to 2333 HV, and was affected by the micro defects such as cracks and voids, and the presence of AlON in the ﬁlm. The hardness was enriched by the presence of AlON. ［ doi:10

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来源期刊

Journal of The Japan Institute of Metals 工程技术-冶金工程

CiteScore

0.70

自引率

0.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Information not localized