{"title":"锂吸附制备T-CrTe2单层膜的可调电子和磁性能","authors":"M. Luo, Q. Zhang, Y. Xu","doi":"10.1080/10584587.2022.2143189","DOIUrl":null,"url":null,"abstract":"Abstract Using first-principle calculations, we investigate the electronic and magnetic properties of Li-adsorbed T-CrTe2 monolayer. We demonstrate that Li adsorption turns the electronic properties mainly through electron doping and lattice expansion. As the adsorption concentration increases from 3.7% to 33.3%, the magnetic moment of Cr increases from 2.25 to 2.98μB linearly. More interesting, the T-CrTe2 monolayer becomes ferromagnetic semiconductors with indirect band gaps under the tensile strain. While a tensile strain is applied, a transformation from metal to half-metal has been found. Our work provides an efficient strategy to seek magnetism and produce two-dimensional magnetic semiconductors and half-metals from metals.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"4 1","pages":"133 - 141"},"PeriodicalIF":0.7000,"publicationDate":"2022-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunable Electronic and Magnetic Properties of T-CrTe2 Monolayer by Li Adsorption\",\"authors\":\"M. Luo, Q. Zhang, Y. Xu\",\"doi\":\"10.1080/10584587.2022.2143189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Using first-principle calculations, we investigate the electronic and magnetic properties of Li-adsorbed T-CrTe2 monolayer. We demonstrate that Li adsorption turns the electronic properties mainly through electron doping and lattice expansion. As the adsorption concentration increases from 3.7% to 33.3%, the magnetic moment of Cr increases from 2.25 to 2.98μB linearly. More interesting, the T-CrTe2 monolayer becomes ferromagnetic semiconductors with indirect band gaps under the tensile strain. While a tensile strain is applied, a transformation from metal to half-metal has been found. Our work provides an efficient strategy to seek magnetism and produce two-dimensional magnetic semiconductors and half-metals from metals.\",\"PeriodicalId\":13686,\"journal\":{\"name\":\"Integrated Ferroelectrics\",\"volume\":\"4 1\",\"pages\":\"133 - 141\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2022-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Integrated Ferroelectrics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1080/10584587.2022.2143189\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/10584587.2022.2143189","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Tunable Electronic and Magnetic Properties of T-CrTe2 Monolayer by Li Adsorption
Abstract Using first-principle calculations, we investigate the electronic and magnetic properties of Li-adsorbed T-CrTe2 monolayer. We demonstrate that Li adsorption turns the electronic properties mainly through electron doping and lattice expansion. As the adsorption concentration increases from 3.7% to 33.3%, the magnetic moment of Cr increases from 2.25 to 2.98μB linearly. More interesting, the T-CrTe2 monolayer becomes ferromagnetic semiconductors with indirect band gaps under the tensile strain. While a tensile strain is applied, a transformation from metal to half-metal has been found. Our work provides an efficient strategy to seek magnetism and produce two-dimensional magnetic semiconductors and half-metals from metals.
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.