先进的短沟道MOS晶体管紧凑模型

O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro
{"title":"先进的短沟道MOS晶体管紧凑模型","authors":"O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro","doi":"10.1109/CICC.2000.852650","DOIUrl":null,"url":null,"abstract":"This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"19 1","pages":"209-212"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Advanced compact model for short-channel MOS transistors\",\"authors\":\"O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro\",\"doi\":\"10.1109/CICC.2000.852650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":\"19 1\",\"pages\":\"209-212\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

摘要

本文介绍了先进的紧凑MOSFET (ACM)模型,这是基于MOS晶体管的物理模型,源自Cunha等人(1998)提出的长沟道晶体管模型。ACM模型由非常简单的表达式组成,适用于任何反转电平,守恒电荷并保持晶体管的源漏对称。短通道效应包括使用紧凑和物理的方法。ACM模型在基准测试中的性能证明了它适合电路仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced compact model for short-channel MOS transistors
This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.
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