先进的短沟道MOS晶体管紧凑模型

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852650

O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro

{"title":"先进的短沟道MOS晶体管紧凑模型","authors":"O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro","doi":"10.1109/CICC.2000.852650","DOIUrl":null,"url":null,"abstract":"This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Advanced compact model for short-channel MOS transistors\",\"authors\":\"O. C. Gouveia-Filho, A. I. A. Cunha, M. C. Schneider, C. Galup-Montoro\",\"doi\":\"10.1109/CICC.2000.852650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

本文介绍了先进的紧凑MOSFET (ACM)模型，这是基于MOS晶体管的物理模型，源自Cunha等人(1998)提出的长沟道晶体管模型。ACM模型由非常简单的表达式组成，适用于任何反转电平，守恒电荷并保持晶体管的源漏对称。短通道效应包括使用紧凑和物理的方法。ACM模型在基准测试中的性能证明了它适合电路仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advanced compact model for short-channel MOS transistors

This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented by Cunha et al. (1998). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

自引率

0.00%

发文量